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Document type:
Zeitschriftenaufsatz 
Author(s):
Ahmadi, M.R.; Fallahpour, A.H.; Allahdadian, J.; Ismail, R. 
Title:
Analytical Study of Carriers in Silicon Nanowires 
Abstract:
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for...    »
 
Keywords:
Silicon Nanowire, Carrier Transport, carrier Velocity, Nanowire Transistor 
Journal title:
MASAUM Journal of Basic and Applied Sciences Vol.1, No. 2 
Year:
2009 
Year / month:
2009-09 
Quarter:
3. Quartal 
Month:
Sep 
Language:
en 
Publisher:
Research Gate