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Document type:
Konferenzbeitrag 
Contribution type:
Textbeitrag / Aufsatz 
Author(s):
Dechant, E.; Seliger, N.; Kennel, R. 
Title:
Performance of a GaN Half Bridge Switching Cell with Substrate Integrated Chips. 
Abstract:
Wide-bandgap semiconductors such as Silicon Carbide (SiC) or Gallium Nitride (GaN) enable fast switching and high switching frequencies of power electronics. However, this potential can not be exploited due to limitations caused by parasitic elements of packaging and interconnections. This paper shows a possibility to minimize parasitic elements of a half-bridge switching cell with 650 V GaN dies integrated into a printed circuit substrate. A sub-nH commutation loop of 0.5 nH inductance...    »
 
Book / Congress title:
Proc. of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) 2019 
Date of congress:
7.-9. May 2019 
Year:
2019 
Quarter:
2. Quartal 
Year / month:
2019-05 
Month:
May 
Reviewed:
ja 
Language:
en 
Semester:
SS 19 
TUM Institution:
Lehrstuhl für Elektrische Antriebssysteme und Leistungselektronik