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Document type:
Zeitschriftenaufsatz 
Author(s):
Sacconi, F.; Di Carlo, A.; Lugli, P.; Stadele, M.A. 
Title:
Full band approach to tunneling in MOS structures 
Abstract:
Using atomistic quantum mechanical tight-binding (TB) methods that include the full band structure, we study electron tunneling through three-dimensional models of n+-Si/SiO2/p-Si capacitors with thicknesses between 0.7 and 4.4 nm. We find that the microscopic oxide structure influences transmission coefficients and tunnel currents significantly. The best agreement with experimental current-thickness and current-voltage data is obtained for a model derived from the β-cristobalite polytype of SiO...    »
 
Journal title:
Electron Devices, IEEE Transactions on (Volume:51 , Issue: 5 ) 
Year:
2004 
Year / month:
2004-06 
Quarter:
2. Quartal 
Month:
Jun 
Pages contribution:
741 - 748 
Language:
en 
Fulltext / DOI:
Publisher:
IEEE Xplore Digital Library