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Document type:
Zeitschriftenaufsatz 
Author(s):
Weber, W.M.; Geelhaar, Graham, A.P.; L.; Unger, E.; Duesber, G.S.; Liebau, M.; Pamler, W.; Cheze, C.; Riechert, H.; Lugli, P. 
Title:
Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts 
Abstract:
Schottky barrier field effect transistors based on individual catalytically-grown and undoped Si-nanowires (NW) have been fabricated and characterized with respect to their gate lengths. The gate length was shortened by the axial, self-aligned formation of nickel-silicide source and drain segments along the NW. The transistors with 10−30 nm NW diameters displayed p-type behaviour, sustained current densities of up to 0.5 MA/cm2, and exhibited on/off current ratios of up to 107. The on-currents w...    »
 
Journal title:
Nano Lett., 2006, 6 (12), pp 2660–2666 
Year:
2006 
Year / month:
2006-11 
Quarter:
4. Quartal 
Month:
Nov 
Pages contribution:
2660 - 2666 
Covered by:
Web of Science 
Language:
en 
Fulltext / DOI:
Publisher:
American Chemical Society 
Publisher address:
Washington