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Title:

Effects of the compliance current on the switching of HfO2 and Al:HfO2 memristive devices: characterization and modeling

Document type:
Konferenzbeitrag
Author(s):
Maldonado, D.; Reddy, K. Dorai Swamy; Pechmann, S.; Hagelauer, A.; Wenger, Ch.; Roldán, J.B.; Pérez, E.
Keywords:
Performance evaluation; Analytical models; Statistical analysis; Shape; Shape measurement; Semiconductor device reliability; Switches; Tin; Semiconductor process modeling; Dielectrics
Book / Congress title:
2025 15th Spanish Conference on Electron Devices (CDE)
Year:
2025
Pages:
1-4
Fulltext / DOI:
doi:10.1109/cde66381.2025.11038898
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