Increase of the allowable switching rate of wide-bandgap semiconductors through spectral control in a 12 V to 48 V gallium-nitride DC/DC converter

Kacetl, Jan; Kacetl, Tomas; Korte, Christian; Specht, Eduard; Jaensch, Malte; Goetz, Stefan

doi:10.1109/peds.2017.8289252

Document type:: Konferenzbeitrag
Author(s):: Kacetl, Jan; Kacetl, Tomas; Korte, Christian; Specht, Eduard; Jaensch, Malte; Goetz, Stefan
Title:: Increase of the allowable switching rate of wide-bandgap semiconductors through spectral control in a 12 V to 48 V gallium-nitride DC/DC converter
Book / Congress title:: 2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS)
Publisher:: IEEE
Date of publication:: 01.12.2017
Year:: 2017
Fulltext / DOI:: doi:10.1109/peds.2017.8289252
BibTeX