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Document type:
Zeitschriftenaufsatz
Author(s):
Gagliardi, A.; Romano, G.; Pecchia, A.; Di Carlo, A.
Title:
Simulation of Inelastic Scattering in Molecular Junctions: Application to Inelastic Electron Tunneling Spectroscopy and Dissipation Effects
Abstract:
In this paper we investigate inelastic processes inside molecular junctions, comprising two electrodes, metallic or semiconducting, connected by a molecular bridge. Inelastic events are fundamental not only because they define the concept of dissipation and resistance at the nanoscale, but also because inelastic scattering can be used directly as probes to investigate characteristics of molecular junctions, such as the geometry of the molecular moiety. We present a non-equilibrium Green's functi...     »
Keywords:
ELECTRON–PHONON SCATTERING; IETS; MOLECULAR ELECTRONICS; NEGF; POWER DISSIPATION; PROPENSITY RULES; TRANSMISSION CHANNELS
Journal title:
Journal of Computational and Theoretical Nanoscience, Volume 7, Number 12, December pp. 2512-2526(15) 2010-10
Year:
2010
Year / month:
2010-10
Quarter:
4. Quartal
Month:
Dec
Pages contribution:
2512 - 2526
Fulltext / DOI:
doi:10.1166/jctn.2010.1646
WWW:
http://www.ingentaconnect.com/content/asp/jctn/2010/00000007/00000012/art00004
Publisher:
American Scientific Publishers
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