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Dokumenttyp:
Zeitschriftenaufsatz
Autor(en):
Gagliardi, A.; Romano, G.; Pecchia, A.; Di Carlo, A.
Titel:
Simulation of Inelastic Scattering in Molecular Junctions: Application to Inelastic Electron Tunneling Spectroscopy and Dissipation Effects
Abstract:
In this paper we investigate inelastic processes inside molecular junctions, comprising two electrodes, metallic or semiconducting, connected by a molecular bridge. Inelastic events are fundamental not only because they define the concept of dissipation and resistance at the nanoscale, but also because inelastic scattering can be used directly as probes to investigate characteristics of molecular junctions, such as the geometry of the molecular moiety. We present a non-equilibrium Green's functi...     »
Stichworte:
ELECTRON–PHONON SCATTERING; IETS; MOLECULAR ELECTRONICS; NEGF; POWER DISSIPATION; PROPENSITY RULES; TRANSMISSION CHANNELS
Zeitschriftentitel:
Journal of Computational and Theoretical Nanoscience, Volume 7, Number 12, December pp. 2512-2526(15) 2010-10
Jahr:
2010
Jahr / Monat:
2010-10
Quartal:
4. Quartal
Monat:
Dec
Seitenangaben Beitrag:
2512 - 2526
Volltext / DOI:
doi:10.1166/jctn.2010.1646
WWW:
http://www.ingentaconnect.com/content/asp/jctn/2010/00000007/00000012/art00004
Verlag / Institution:
American Scientific Publishers
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