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Document type:
Konferenzbeitrag 
Contribution type:
Poster 
Author(s):
Max Stelzer, Moritz Jung, Ursula Wurstbauer, Alexander Holleitner, Franz Kreupl 
Title:
High Performance Graphenic Carbon-Silicon Contacts 
Abstract:
Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, like in FinFETs or Schottky diodes. TiSi diffuses into the active region under high current stress, like during an electro-static discharge (ESD) event. Graphenic carbon (GC) contacts to silicon are superior to a TiSi-Si junction. Carbon gives the same low Schottky barrier height (SBH) of 0.45 eV or even lower, but the C-Si contact can be over 1 billion times more stable against high current pulses. The deposition is possible with a CVD process (≤ 1000°C) or even with a modified sputter process at < 400 °C. The good electrical conductivity and low optical reflectivity render graphenic carbon a particularly suitable electrode material for Schottky photodiodes. 
Book / Congress title:
Infineon University 
Organization:
Infineon 
Date of congress:
24.10.2019 
Date of publication:
24.10.2019 
Year:
2019 
Language:
en 
TUM Institution:
Hybride Elektronische Systeme