Max Stelzer, Moritz Jung, Ursula Wurstbauer, Alexander Holleitner, Franz Kreupl
High Performance Graphenic Carbon-Silicon Contacts
Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, like in FinFETs or Schottky diodes. TiSi diffuses into the active region under
high current stress, like during an electro-static discharge (ESD) event. Graphenic carbon (GC) contacts to silicon are superior to a TiSi-Si junction. Carbon gives
the same low Schottky barrier height (SBH) of 0.45 eV or even lower, but the C-Si contact can be over 1 billion times more stable against high current pulses.
The deposition is possible with a CVD process (≤ 1000°C) or even with a modified sputter process at < 400 °C. The good electrical conductivity and low optical
reflectivity render graphenic carbon a particularly suitable electrode material for Schottky photodiodes.