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- Document type:
- Patent
- Patent number:
- EP 2539936 B1
- Inventor:
- KREUPL FRANZ, DE ; XU HUIWEN, US ; ZHANG JINGYAN, US
- Assignee:
- KREUPL FRANZ, DE ; XU HUIWEN, US ; ZHANG JINGYAN, US
- Title:
- METHODS FOR FORMING A MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER
- Patent office:
- EP
- Publication date patent:
- 06.04.2016
- Year:
- 2016
- Language:
- en
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX