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Author(s):
Heiß, L.; Lachmann, A.; Schwab, R.; Panagopoulos, G.; Baumgartner, P.; Virupakshappaa, M. Y.; Schmitt-Landsiedel, D. 
Title:
{N}ew methodology for on-chip {RF} reliability assessment 
Keywords:
hot carriers; integrated circuit reliability; negative bias temperature instability; oscilloscopes; stress analysis; AC stress signal; NBTI; PBTI; exponential voltage dependency; high-k technology; hot carrier degradation; on-chip RF reliability assessment; on-chip oscilloscope; on-chip stress circuit; size 28 nm; transistor reliability mechanism; Integrated circuit reliability; Radio frequency; Stress; Stress measurement; System-on-chip; Transistors 
Book / Congress title:
2016 IEEE International Reliability Physics Symposium (IRPS) 
Year:
2016 
Month:
April 
Pages:
4C-5-1-4C-5-7