COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS
Dokumenttyp:
Patentanmeldung
Patentanmeldung Nr.:
WO 2011159583 A4
Erfinder:
BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, US RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US
Patentanmelder:
BANDYOPADHYAY ABHIJIT, US CHEN YUNG-TIN, US FU CHU-CHEN, US JAYASEKARA WIPUL PEMSIRI, US KAI JAMES, US KREUPL FRANZ, DE MAKALA RAGHUVEER S, US RABKIN PETER, US SAMACHISA GEORGE, US ZHANG JINGYAN, US