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Dokumenttyp:
Konferenzbeitrag
Art des Konferenzbeitrags:
Poster
Autor(en):
Tallarida, G.; Huby, N.; Kutrzeba-Kotowska, B.; Spiga, S.; Lugli, P.; Csaba, G.; Arcari, M.; Guziewicz, E.; Godlewsk, M.
Titel:
Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices
Abstract:
ZnO-based Schottky junctions fabricated at low temperature are proposed as selectors for crossbar non-volatile memory devices. Rectifying ratio over 107 and forward current density as high as 104 A/cm2 are reported. Results of the integration with NiO based switching memory elements are also shown.
Kongress- / Buchtitel:
MRS 09 – Spring Meeting Memory Workshop, 2009. IMW '09. IEEE International
Kongress / Zusatzinformationen:
Monterey CA USA, April 13-17, 2009
Verlag / Institution:
IEEE Xplore Digital Library
Jahr:
2009
Quartal:
2. Quartal
Jahr / Monat:
2009-04
Monat:
May
Sprache:
en
Volltext / DOI:
doi:10.1109/IMW.2009.5090598
WWW:
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5090598
Format:
Text
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