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Document type:
Zeitschriftenaufsatz 
Author(s):
Erlen, C.; Lugli, P. 
Title:
Analytical Model of Trapping Effects in Organic Thin-Film Transistors 
Abstract:
We report an analytical model for organic thin-film transistors that accounts for the influence of trap states on the current voltage characteristics. As the subthreshold regime sensitively reacts to the presence of traps, it is used to extract approximate trap parameters from experimental transistor data. To demonstrate the capability of our method, a comparison with the results of 2-D drift-diffusion simulations is provided 
Journal title:
Electron Devices, IEEE Transactions on (Volume:56 , Issue: 4 ) 
Year:
2009 
Year / month:
2009-04 
Quarter:
2. Quartal 
Month:
Apr 
Pages contribution:
546-552 
Language:
en 
Publisher:
IEEE Xplore Digital Library 
Print-ISSN:
0018-9383 
Format:
Text