SiC MOSFET has faster switching speed, lower RDS(on), and higher breakdown voltage when compared with Si MOSFET. Therefore, SiC MOSFET can work at work at higher frequencies, even Mhz. However, the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper, and a gate driver with the variable gate resistance and the variable driving voltage and is proposed to suppress OVOC of SiC MOSFET. This paper analyzes the working mode of the proposed gate driver (PGD).The PGD can effectively suppress the OVOC of SiC MOSFET. Finally, the effectiveness of the PGD is verified based on a doublepulse test platform.     «

SiC MOSFET has faster switching speed, lower RDS(on), and higher breakdown voltage when compared with Si MOSFET. Therefore, SiC MOSFET can work at work at higher frequencies, even Mhz. However, the overvoltage and overcurrent (OVOC) of SiC MOSFET become more serious with the increase of frequency due to the low damping and the parasitic parameters in the actual circuit. The causes of overcurrent and overvoltage of SiC MOSFET are analyzed in this paper, and a gate driver with the variable...     »