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Document type:
Zeitschriftenaufsatz 
Author(s):
Kaczer, B.; Larcher, L.; Vandelli, L.; .Reisinger, H.; Popovicia, M.; Climaa, S.; Jie, Z.; Swertsa, S.J.J.; Redolfia, A.; Afanas’ev, V.V.; Jurczaka, M. 
Title:
SrTiOx for sub-20 nm DRAM technology nodes—Characterization and modeling 
Abstract:
The electrical properties of Ru/SrTiOx/Ru capacitors have been investigated. Equivalent Oxide Thickness (EOT) of 0.38 nm at 0 V and current density of 10−7 A cm−2 at ±1 V and 25 °C meet the sub-20 nm DRAM requirements. Relaxation measurements were performed, indicating acceptable charge loss. Modeling of charge trapping at defect sites based on multi-phonon trap-assisted-tunneling quantitatively well describes leakage and capacitance behavior. Highlights • Metal–Insulator–Metal capacitors wi...    »
 
Keywords:
Metal–Insulator–Metal capacitor Strontium titanate Traps 
Journal title:
INFOS 2015 Microelectronic Engineering Volume 147 2015-11 
Year:
2015 
Year / month:
2015-11 
Quarter:
4. Quartal 
Month:
Nov 
Pages contribution:
126-129 
Language:
en 
Publisher:
Elsevier B.V.