User: Guest  Login
Document type:
Zeitschriftenaufsatz 
Author(s):
Popescu, B.; Popescu, D.; Saraniti, M.; Lugli, P. 
Title:
Full-Band 3-D Monte Carlo Simulation of InAs Nanowires and High Frequency Analysis 
Abstract:
In this paper, we have investigated the electron transport and frequency response of the state-of-the-art single-InAs nanowire (NW) FETs using a full-band Monte Carlo simulator. InAs transistors using a single NW as the channel reveal excellent properties such as high current densities, high transconductance, and superior mobility when compared with silicon devices. One aspect that has been neglected until now is the high-frequency (HF) response of such devices. We perform a detailed HF analysis...    »
 
Keywords:
III-V semiconductors, Monte Carlo methods, current density, field effect transistors, frequency response, indium compounds, nanowires, semiconductor device models, InAs, InAs transistors, current density, electron distribution, electron transport, full-band 3D Monte Carlo simulation, high frequency analysis, high transconductance, high-frequency response, parasitic elements, power transfer, single-InAs nanowire FET, superior mobility, Analytical models, Capacitance, Doping, Gain, Logic gates, Sc...    »
 
Journal title:
IEEE Transactions on Electron Devices (Volume:62 , Issue: 6 ) 2015-05 
Year:
2015 
Year / month:
2015-05 
Quarter:
2. Quartal 
Month:
May 
Pages contribution:
1848--1854 
Language:
en 
Publisher:
IEEE Xplore Digital Library 
Print-ISSN:
0018-9383