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Document type:
Konferenzbeitrag 
Author(s):
Fallahpour, A.H.; Ahmadi, M.T.; Ismail, R. 
Title:
Analytical study of drift velocity in N-type silicon nanowires 
Abstract:
Print Request Permissions My Projects is in the process of migrating to a new online community. Click icon for details. The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zero-field to streamlined one in a very high electric field. The ultima...    »
 
Book / Congress title:
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on 
Congress (additional information):
Kuala Lumpur, Malaysia, 15-16 July 2009 
Publisher:
IEEE Xplore Digital Library 
Year:
2009 
Quarter:
3. Quartal 
Year / month:
2009-07 
Month:
Jul 
Pages:
252-254 
Print-ISBN:
978-1-4244-4952-1 
E-ISBN:
978-1-4244-4952-1 
Language:
en