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Document type:
Zeitschriftenaufsatz 
Author(s):
Ahmadi; M.T.; Fallahpour, A.H.; Kohdaragh, V.; Ismail 
Title:
PType Silicon Nanowire Transistor Modeling 
Abstract:
The presented model based on the quantum confinement and high electric filed effect illustrates velocity approach to the modeling of a P-type silicon nanowire transistor. It has been clarified that the intrinsic velocity of nanowire and other hetero-structure field-effect transistors (FETs) is governed by the transit time of holes (electrons). The length of the channel for ballistic channel is equal to mean free path. However, it does not affect the velocity saturation in high electric field tha...    »
 
Journal title:
International Journal of Recent Trends in Engineering (IJRTE) Vol 2, No. 6 
Year:
2009 
Year / month:
2009-11 
Quarter:
4. Quartal 
Month:
Nov 
Language:
en 
Publisher:
Academy Publisher 
Print-ISSN:
1797-9617