Login
- Dokumenttyp:
- Zeitschriftenaufsatz
- Autor(en):
- Sterkel, M.; Wang, P.F.; Nirschl, T.; Fabel, B.; Buhwalka, K.; Eisele, I.; Schmitt-Landsiedel, D.; Hansch, W.
- Titel:
- Characteristics and optimisation of vertical and planar tunnelling-FETs
- Abstract:
- Scaling MOSFETs becomes more and more difficult. The tunnelling-FET is a possible successor of today’s MOSFET with better scaling possibilities. Two different device structures, a vertical and a planar version of a tunnelling-FET are presented and evaluated.
- Kongresstitel:
- Second Conference on Microelectronics, Microsystems and Nanotechnology (MMN), Munich, 2004
- Zeitschriftentitel:
- Journal of Physics: Conference Series 10 (2005) 15–18
- Jahr:
- 2004
- Sprache:
- en
- Volltext / DOI:
- doi:10.1088/1742-6596/10/1/004
- WWW:
- http://iopscience.iop.org/1742-6596/10/1/004/pdf/1742-6596_10_1_004.pdf
- Verlag / Institution:
- IOP Publishing, Institute of Physics Publishing
BibTeX