Sterkel, M.; Wang, P.F.; Nirschl, T.; Fabel, B.; Buhwalka, K.; Eisele, I.; Schmitt-Landsiedel, D.; Hansch, W.
Characteristics and optimisation of vertical and planar tunnelling-FETs
Scaling MOSFETs becomes more and more difficult. The tunnelling-FET is a
possible successor of today’s MOSFET with better scaling possibilities. Two different device
structures, a vertical and a planar version of a tunnelling-FET are presented and evaluated.
Second Conference on Microelectronics, Microsystems and Nanotechnology (MMN), Munich, 2004
Journal of Physics: Conference Series 10 (2005) 15–18