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Document type:
Zeitschriftenaufsatz 
Author(s):
Popescu, B.; Popescu, D.; Lugli, P. 
Title:
Modeling and High-Frequency Simulation of InAs Nanowires 
Abstract:
In this paper, we have investigated the transport in InAs nanowire-based wrap gate field-effect transistors and their high-frequency performance. State-of-the-art InAs devices reveal excellent dc performance in terms of transconductance, subthreshold slope, and saturation behavior. Only, very recently high-frequency measurements have been performed on these devices, demonstrating that they can operate well in the gigahertz range. However, their intrinsic high-frequency performance and the limiti...    »
 
Keywords:
Cutoff frequency InAs field-effect transistor (FET) nanowire (NW) simulation trap states wrap gate 
Journal title:
Nanotechnology, IEEE Transactions on (Volume:13 , Issue: 4 ) 
Year:
2014 
Year / month:
2014-07 
Quarter:
3. Quartal 
Month:
Jul 
Language:
en 
Publisher:
IEEE Xplore Digital Library