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Document type:
Zeitschriftenaufsatz 
Author(s):
Schukfeh, M.I.; Storm, K.; Mahmoud, A.; Sondergaard, R.R.; Szwajca, A.; Hansen, A.; Hinze, P.; Weimann, T.; Svensson, S.F.; Bora, A.; Dick, K.A.; Thelander, C.; Krebs, F.C.; Lugli, P.; Samuelson, L.; Tornow, M. 
Title:
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo (phenylene vinylene)s 
Abstract:
We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I–V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach...    »
 
Keywords:
nanowires; heterostructure; InAs; molecular electronics; oligo(phenylene vinylene) 
Journal title:
ACS Nano, 2013, 7 (5), pp 4111–4118 2013-04 
Year:
2013 
Year / month:
2013-04 
Quarter:
2. Quartal 
Month:
Apr 
Pages contribution:
4111 - 4118 
Language:
en 
Publisher:
American Chemical Society