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Document type:
Zeitschriftenaufsatz 
Author(s):
Jegert, G.; Popescu, D.; Lugli, P.; Haufel, M.J.; Weinreich, W.; Kersch, A. 
Title:
Role of defect relaxation for trap-assisted tunneling in high-κ thin films: A first-principles kinetic Monte Carlo study 
Abstract:
We assess the impact of structural relaxation of defects upon charging on trap-assisted tunneling in high-κ dielectric materials. ZrO 2 /Al 2 O 3 /ZrO 2 thin films are taken as an exemplary system. In our completely different approach, a first-principles defect model is derived from Hedins GW approximation calculations, which is then coupled to kinetic Monte Carlo charge transport simulations. Comparison between simulation and experiment demonstrates that it is often imperative to take struct...    »
 
Journal title:
Phys. Rev. B 85, 045303 
Year:
2012 
Year / month:
2012-01 
Quarter:
1. Quartal 
Month:
Jan 
Reviewed:
ja 
Language:
en 
Publisher:
American Physical Society 
Format:
Text