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Author(s):
Weis, M.; Pfitzner, A.; Kasprowicz, D.; Emling, R.; Fischer, T.; Henzler, S.; Maly, W.; Schmitt-Landsiedel, D. 
Title:
Stacked 3-dimensional 6T SRAM cell with independent double gate transistors 
Pages contribution:
169-172 
Keywords:
SRAM chips, field effect transistorscell stability, compact stacked 3D memory cell topology, independent double gate transistors, memory cell area reduction, read operation, stacked 3-dimensional 6T SRAM cell, vertical slit field effect transistor, write operation 
Book / Congress title:
IC Design and Technology, 2009. ICICDT '09. IEEE International Conference on 
Year:
2009 
Month:
May