Using an unmodified 130-nm CMOS process,we present the design of an integrated 2-D CMOS stress sensorand trim methodology resulting in 11-bit resolution and 66-dBdynamic range. The n-well-only primary sensing elements andp-type auxiliary elements allow post-calibrated measurement ofboth stress magnitude and angle over the commercial tempera-ture range from 5◦Cto90◦C. The implementation is robust toprocess variation, requires 357μW when active, and is optimizedfor duty cycling to reduce system energy consumption.     «

Using an unmodified 130-nm CMOS process,we present the design of an integrated 2-D CMOS stress sensorand trim methodology resulting in 11-bit resolution and 66-dBdynamic range. The n-well-only primary sensing elements andp-type auxiliary elements allow post-calibrated measurement ofboth stress magnitude and angle over the commercial tempera-ture range from 5◦Cto90◦C. The implementation is robust toprocess variation, requires 357μW when active, and is optimizedfor duty cycling to reduce system e...     »