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Document type:
Zeitschriftenaufsatz 
Author(s):
M Stelzer, M Jung, U Wurstbauer, AW Holleitner, F Kreupl 
Title:
Low Temperature Sputtered Graphenic Carbon Enables Highly Reliable Contacts to Silicon 
Abstract:
Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts [1]–[3] but are known to diffuse into the active region under high current stress. Recently we demonstrated [4], [5] that graphenic carbon (GC) deposited by CVD has the same low Schottky barrier on silicon as TiSi, but a much improved reliability against high current stress. The drawback of the CVD-GC is the required deposition temperature of ∼ 900 °C. In this paper we demonstrate now that the deposition of graphenic carb...    »
 
Journal title:
Proceedings of the 2018 IEEE International Electron Devices Meeting (IEDM) 
Year:
2018 
Year / month:
2018-12 
Covered by:
Scopus 
Language:
en 
Publisher:
IEEE 
TUM Institution:
Hybride Elektronische Systeme