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Document type:
Magazinartikel 
Author(s):
S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl 
Title:
Resolving trapping effects by scanning microwave microscopy 
Abstract:
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface. 
Journal title:
Microelectronics Reliability 
Year:
2019 
Covered by:
Scopus 
TUM Institution:
Hybride Elektronische Systeme