Resistive switching in single spherical core-shell Ag/SiO x -nanoparticles (CSNP) of diameter 150 nm is reported. These nanoparticles were contacted by interdigitated electrodes (IDE) and exhibit either bipolar memristive or threshold switching with OFF/ON resistance ratios in excess of three orders of magnitude. A switching mechanism based on silver ion migration in the silica shell is proposed, which leads to reversible conductive filament formation and rupture. Application of CSNP as functional building blocks in future self-assembled 3D memory architectures or neuromorphic networks is proposed.     «

Resistive switching in single spherical core-shell Ag/SiO x -nanoparticles (CSNP) of diameter 150 nm is reported. These nanoparticles were contacted by interdigitated electrodes (IDE) and exhibit either bipolar memristive or threshold switching with OFF/ON resistance ratios in excess of three orders of magnitude. A switching mechanism based on silver ion migration in the silica shell is proposed, which leads to reversible conductive filament formation and rupture. Application of CSNP as function...     »