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Dokumenttyp:
Konferenzbeitrag
Autor(en):
Haider Al Kim, Sven Puchinger, and Antonia Wachter-Zeh
Titel:
Bounds and Code Constructions for Partially Defect Memory Cells
Abstract:
This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for masking such partially stuck cells while additionally correcting errors. This construction (for cells with q > 2 levels) is achieved by generalizing an existing masking-only construction in [1] (based on binary codes) to correct errors as well. Compared to previous constructions in [2], our new construction achieves larger rates for many sets of parameters. Second, we derive a sphere-packing (any number of u partially stuck cells) and a Gilbert-Varshamov bound (u < q partially stuck cells) for codes that can mask a certain number of partially stuck cells and correct errors additionally. A numerical comparison between the new bounds and our previous construction of PSMCs for the case u < q in [2] shows that our construction lies above the Gilbert–Varshamovlike bound for several code parameters.
Stichworte:
flash memories, phase change memories, defect memory, (partially) stuck cells, defective cells error correction, sphere packing bound, Gilbert-Varshamov bound
Kongress- / Buchtitel:
Seventeenth International Workshop on Algebraic and Combinatorial Coding Theory ACCT 2020 October 11 - 17, 2020, BULGARIA
Ausrichter der Konferenz:
TUM,DTU,UoK
Verlag / Institution:
IEEE Xplore
Jahr:
2020
Jahr / Monat:
2020-10
Sprache:
en
WWW:
https://arxiv.org/abs/2009.06512
TUM Einrichtung:
Lehrstuhl für Nachrichtentechnik
 BibTeX