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Document type:
Konferenzbeitrag 
Contribution type:
Vortrag / Präsentation 
Author(s):
S. Hommel, N. Killat, T. Schweinboeck, A. Altes , F. Kreupl 
Title:
Resolving Trap-caused Charges by Scanning Microwave Microscopy 
Abstract:
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices. On the example of a Si diode with suspected oxide traps, a method based on Scanning Microwave Microscopy (SMM) is shown to resolve charge carriers, which accumulate within the silicon due to trapping effects at the Si/SiO2 interface. 
Editor:
IEEE 
Book / Congress title:
The International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 
Date of congress:
16.-19.7 
Date of publication:
18.07.2018 
Year:
2018 
Pages:
Reviewed:
ja 
Publication format:
WWW 
TUM Institution:
Hybride Elektronische Systeme