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Document type:
Patent 
Patent number:
EP 2539936 B1 
Inventor:
KREUPL FRANZ, DE ; XU HUIWEN, US ; ZHANG JINGYAN, US 
Assignee:
KREUPL FRANZ, DE ; XU HUIWEN, US ; ZHANG JINGYAN, US 
Title:
METHODS FOR FORMING A MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER 
Patent office:
EP 
Publication date patent:
06.04.2016 
Year:
2016 
Language:
en 
Covered by:
Scopus 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text