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- Patent number:
- EP000002583322B1
- Inventor:
- KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, US
- Assignee:
- KREUPL FRANZ, US; FU CHU-CHEN, US; NIAN YIBO, US
- Title:
- MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER
- Patent office:
- EU
- Publication date patent:
- 05.04.2017
- Year:
- 2017
- Pages:
- 47
- Language:
- en
- Covered by:
- Scopus
- TUM Institution:
- Hybride Elektronische Systeme
- Format:
- Text
BibTeX