The degradation of Ga0.5In0.5P/GaAs/Ge triple junction 3G28, 3G30 and isotype 3G28 Ga0.5In0.5P and GaAs cells is analysed and the characteristic degradation curves are determined. The well established displacement damage method was applied in combination with a variable Td as a fitting parameter. The validity of the NIEL data analysis was verified by the reproduction of a Td of 21 eV for GaAs. The same method that has been published recently yields 36 eV for Ga0.5In0.5P single junction cells. The analytically calculated NIEL for GaAs and Ga0.5In0.5P with these respective threshold displacement energies overlap, which is the reason why both NIELs can be used for degradation fitting of the triple junction cell.     «

The degradation of Ga0.5In0.5P/GaAs/Ge triple junction 3G28, 3G30 and isotype 3G28 Ga0.5In0.5P and GaAs cells is analysed and the characteristic degradation curves are determined. The well established displacement damage method was applied in combination with a variable Td as a fitting parameter. The validity of the NIEL data analysis was verified by the reproduction of a Td of 21 eV for GaAs. The same method that has been published recently yields 36 eV for Ga0.5In0.5P single junction cells. Th...     »