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Document type:
Patent 
Patent number:
US 9177995 B2 
Inventor:
Martin Gutsche; Franz Kreupl; Harald Seidl 
Assignee:
Martin Gutsche; Franz Kreupl; Harald Seidl 
Title:
Vertical interconnect structure, memory device and associated production method 
Abstract:
The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is subsequently formed between the catalyst and the contact region and embedded in a dielectric layer. 
Patent office:
US 
Publication date patent:
03.11.2015 
Year:
2015 
Covered by:
Scopus 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text