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Dokumenttyp:
Konferenzbeitrag 
Autor(en):
Fallahpour, A.H.; Ahmadi, M.T.; Ismail, R. 
Titel:
Analytical study of drift velocity in N-type silicon nanowires 
Abstract:
Print Request Permissions My Projects is in the process of migrating to a new online community. Click icon for details. The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zero-field to streamlined one in a very high electric field. The ultima...    »
 
Kongress- / Buchtitel:
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on 
Kongress / Zusatzinformationen:
Kuala Lumpur, Malaysia, 15-16 July 2009 
Verlag / Institution:
IEEE Xplore Digital Library 
Jahr:
2009 
Quartal:
3. Quartal 
Jahr / Monat:
2009-07 
Monat:
Jul 
Seiten:
252-254 
Print-ISBN:
978-1-4244-4952-1 
E-ISBN:
978-1-4244-4952-1 
Sprache:
en