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Document type:
Patent 
Patent application number:
EP 2548238 B1 
Inventor:
SEKAR DEEPAK CHANDRA, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; 
Assignee:
SEKAR DEEPAK CHANDRA, US; KREUPL FRANZ, US ; MAKALA RAGHUVEER S, US ; 
Title:
METHOD OF FORMING BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERS 
Abstract:
In a first aspect, a metal-insulator-metal ("MIM") stack is provided that includes a first conductive layer, a resistivity-switching layer having a metal oxide layer formed above the first conductive layer, a material layer between the first conductive layer and the resistivity-switching layer, and a second conductive layer above the resistivity-switching layer. The first conductive layer includes a multi-layer metal-silicide stack, and the material layer has a Gibbs free energy of formation per...    »
 
Patent office:
EP 
Publication date patent:
22.04.2015 
Year:
2015 
Pages:
26 pages 
Language:
en 
Covered by:
Scopus 
TUM Institution:
Hybride Elektronische Systeme 
Format:
Text