Benutzer: Gast  Login
Autor(en):
Kasper, Erich; Wanner, Robert; Russer, Peter 
Titel:
Resonance phase operation of heterobipolar transistors beyond their transit frequency 
Abstract:
In this paper we explain the resonant enhancement of the current gain at frequencies beyond the transit frequency and we describe the experimental verification of the resonance phase effect. A resonance phase transistor (RPT) is an HBT where transit time effects in the base region and the collector junction are utilized to achieve amplification beyond the transit frequency f/sub T/. In this work a relatively thick graded SiGe base layer of 120nm is used to facilitate accurate experimental charac...    »
 
Stichworte:
120 nm, 20 V, 40 GHz, 6.5 dB, base region, breakdown voltage, collector junction, Current gain, Ge-Si alloys, heterobipolar transistors, heterojunction bipolar transistors, millimeter wave transistors, millimetre wave transistors, resonance phase effect, resonance phase operation, resonance phase transistor, resonant enhancement, RPT cascode circuit, semiconductor device breakdown, SiGe, thick graded base layer, transit frequency, transit time effects 
Kongress- / Buchtitel:
Bipolar/BiCMOS Circuits and Technology Meeting 
Verlagsort:
Santa Barbara, CA, USA 
Jahr:
2005 
Monat:
oct 
Seiten:
155--162