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Autor(en):
Wanner, Robert; Schäfer, Herbert; Lachner, Rudolf; Olbrich, Gerhard R.; Russer, Peter 
Titel:
A fully integrated SiGe low phase noise push-push VCO for 82 GHz 
Abstract:
We present a fully monolithically integrated push-push oscillator fabricated in a production-near SiGe:C bipolar technology. The oscillator output frequency can be varactor tuned from 80.6 GHz to 82.4 GHz. In this frequency range the measured output power is 3.5 /spl plusmn/ 0.4 dB m while the measured single sideband phase noise is less than -105 dBc/Hz at 1 MHz offset frequency. To our knowledge this phase noise level is the lowest one reported in literature so far for an VCO in this frequency...    »
 
Stichworte:
1 MHz, 200 GHz, 275 GHz, 80.6 to 82.4 GHz, bipolar MIMIC, bipolar technology, carbon, Ge-Si alloys, integrated low phase noise push-push VCO, integrated resistors, maximum transit frequency, millimetre wave oscillators, MIM devices, MIM-capacitors, monolithically integrated push-push oscillator fabrication, passive circuitry transmission-line components, passive networks, phase noise, semiconductor materials, sideband phase noise, SiGe:C, varactor, varactors, voltage-controlled oscillators 
Kongress- / Buchtitel:
European Gallium Arsenide and Other Semiconductor Application Symposium (EGAAS) 
Verlagsort:
Paris, France 
Jahr:
2005 
Monat:
oct 
Seiten:
249--252