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- Author(s):
- Wanner, Robert; Lachner, Rudolf; Olbrich, Gerhard R.
- Title:
- A monolithically integrated 190-GHz SiGe push-push oscillator
- Abstract:
- In this letter, we present a fully monolithically integrated G-band push-push oscillator. The device is fabricated in a production-near SiGe:C bipolar technology. The transistors used in this work show a maximum transit frequency f/sub T/= 200GHz and a maximum frequency of oscillation
- Keywords:
- 190 GHz, 200 GHz, 275 GHz, bipolar MIMIC, bipolar technology, carbon, G-band push-push oscillator, Ge-Si alloys, Heterojunction bipolar transistor (HBT), heterojunction bipolar transistor technology, integrated transmission-line components, metal-insulator-metal capacitors, millimeter wave integrated circuits, millimetre wave oscillators, MIMIC oscillators, monolithic integrated push-push oscillator, monolithic microwave integrated circuit (MMIC) oscillators, monolithic microwave integrated circ... »
- Journal title:
- IEEE Microwave and Wireless Components Letters
- Year:
- 2005
- Journal volume:
- 15
- Month:
- dec
- Journal issue:
- 12
- Pages contribution:
- 862--864
- Fulltext / DOI:
- doi:10.1109/LMWC.2005.859996
- Print-ISSN:
- 1531-1309
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