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Autor(en):
Heim, Sandra; Wanner, Robert; Stoffel, Mathieu; Kasper, Erich 
Titel:
Resonance Phase Operation of a SiGe HBT 
Abstract:
A novel operation mode--the so-called resonance phase operation--is demonstrated using a SiGe HBT (hetero-bipolar transistor). Transit time effects and coherent transport lead by proper design of the transistor to a phase shift larger than [pi]. In this resonance phase mode, a current gain above 0ï¿œdB is achieved at frequency bands well above the transit frequency. We have designed and fabricated SiGe HBTs in order to investigate the resonance phase effect at frequencies below 50ï¿œGHz due to e...    »
 
Stichworte:
Current gain, HBT, resonance phase transistor, SiGe 
Zeitschriftentitel:
Materials Science in Semiconductor Processing 
Jahr:
2005 
Band / Volume:
Heft / Issue:
1-3 
Seitenangaben Beitrag:
319--322