We present a generally applicable approach to enhance the conversion efficiency from optical input to usable coherent output power for THz emitters based on optically excited charge carriers. Guided by numerical simulations, the dielectric environment of the emitter is modified to improve radiation rate and spatial emission characteristics. The modifications comprise a sapphire layer applied on the semiconductor surface and a gold backside metallization. Comparison between a standard InGaAs semiconductor surface field emitter and an optimized version yields an increase of one order of magnitude in coherently emitted THz power. This result is in close agreement with the numerical simulations.     «

We present a generally applicable approach to enhance the conversion efficiency from optical input to usable coherent output power for THz emitters based on optically excited charge carriers. Guided by numerical simulations, the dielectric environment of the emitter is modified to improve radiation rate and spatial emission characteristics. The modifications comprise a sapphire layer applied on the semiconductor surface and a gold backside metallization. Comparison between a standard InGaAs semi...     »