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Autor(en):
Sinnesbichler, Franz X.; Hautz, B.; Olbrich, Gerhard R. 
Titel:
Low Phase Noise 58 GHz SiGe HBT Push-Push Oscillator with Simulatneous 29 GHz Output 
Abstract:
We present hybrid SiGe HBT push-push oscillators at 58 GHz, fabricated on 5 mil alumina substrates. A second output additionally allows us to make use of the fundamental 29 GHz signal. A maximum output power of +1 dBm at 58 GHz and simultaneously of 0 dBm at 29 GHz were achieved. Phase noise at 58 GHz was measured to be -108 dBc/Hz at an offset frequency of 1 MHz 
Stichworte:
29 GHz, 58 GHz, Altextlesssubtextgreater2textless/subtextgreaterOtextlesssubtextgreater3textless/subtextgreater, alumina substrates, EHF, Ge-Si alloys, heterojunction bipolar transistors, hybrid integrated circuits, hybrid MM-wave IC, integrated circuit noise, low phase noise, millimetre wave integrated circuits, millimetre wave oscillators, phase noise, semiconductor materials, SiGe, SiGe HBT push-push oscillator 
Kongress- / Buchtitel:
IEEE MTT-S International Microwave Symposium 
Band / Teilband / Volume:
Verlagsort:
Boston, MA, USA 
Jahr:
2000 
Monat:
jun 
Seiten:
35--38