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Autor(en):
Sinnesbichler, Franz X.; Olbrich, Gerhard R. 
Titel:
SiGe HBT Push-Push Oscillators for V-Band Operation 
Abstract:
The application of the push-push principle to oscillator design allows the extension of the usable frequency range of transistors for signal generating applications. In this paper, we present several V-band SiGe HBT push-push oscillators using both microstrip transmission line resonators as well as dielectric resonators. The circuits are fabricated in thin film technology on alumina substrates. The measured data of the microstrip transmission line oscillators are an output power of -5.6 dBm and...    »
 
Stichworte:
50 to 58 GHz, Altextlesssubtextgreater2textless/subtextgreaterOtextlesssubtextgreater3textless/subtextgreater, alumina substrates, dielectric resonator oscillators, dielectric resonators, DRO, EHF, Ge-Si alloys, heterojunction bipolar transistors, hybrid integrated circuits, microstrip resonators, microstrip transmission line resonators, millimetre wave integrated circuits, millimetre wave oscillators, oscillator design, semiconductor materials, SiGe, SiGe HBT push-push oscillators, thin film ci...    »
 
Kongress- / Buchtitel:
2nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 
Verlagsort:
Garmisch-Partenkirchen, Germany 
Jahr:
2000 
Monat:
apr 
Seiten:
55--59