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Autor(en):
Sinnesbichler, Franz X.; Geltinger, Hans; Olbrich, Gerhard R. 
Titel:
A 50 GHz SiGe HBT Push-Push Oscillator 
Abstract:
We present a 50 GHz push-push oscillator fabricated in thin film technology on an alumina substrate using silicon-germanium HBTs. Output power of the oscillator is -5.6 dBm with a suppression of the fundamental and the second harmonic signal of -40 dBc and -38 dBc, respectively. Measured phase noise of the oscillator is -98 dBc at an offset frequency of 1 MHz 
Stichworte:
50 GHz, Altextlesssubtextgreater2textless/subtextgreaterOtextlesssubtextgreater3textless/subtextgreater, alumina substrate, EHF, Ge-Si alloys, heterojunction bipolar transistors, hybrid integrated circuits, millimetre wave integrated circuits, millimetre wave oscillators, MM-wave IC, phase noise, semiconductor materials, SiGe, SiGe HBT push-push oscillator, thin film circuits, thin film technology 
Kongress- / Buchtitel:
IEEE MTT-S International Microwave Symposium 
Band / Teilband / Volume:
Verlagsort:
Anaheim, CA, USA 
Jahr:
1999 
Monat:
jun 
Seiten:
9--12