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Autor(en):
Kaleja, Martin M.; Heide, Patric; Biebl, Erwin M.
Titel:
An Active Integrated 24-GHz Antenna Using a Flip-Chip Mounted HEMT
Abstract:
In this paper an active integrated microstrip antenna at 24 GHz employing a three-terminal active device is presented. A high electron mobility transistor (HEMT) is integrated in a purely uniplanar microstrip structure by means of flip-chip technology, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. A radiated output power of 10 mW and a dc-to-RF efficiency of 20
Stichworte:
10 mW, 20 percent, 24 GHz, active antennas, active integrated microstrip antenna, flip-chip devices, flip-chip technology, high electron mobility transistor, high electron mobility transistors, microstrip antennas, three-terminal device
Zeitschriftentitel:
IEEE Microwave and Guided Wave Letters
Jahr:
1999
Band / Volume:
9
Monat:
jan
Heft / Issue:
1
Seitenangaben Beitrag:
34--36
Volltext / DOI:
doi:10.1109/75.752116
Print-ISSN:
1051-8207
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