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Author(s):
Kaleja, Martin M.; Heide, Patric; Biebl, Erwin M. 
Title:
An Active Integrated 24-GHz Antenna Using a Flip-Chip Mounted HEMT 
Abstract:
In this paper an active integrated microstrip antenna at 24 GHz employing a three-terminal active device is presented. A high electron mobility transistor (HEMT) is integrated in a purely uniplanar microstrip structure by means of flip-chip technology, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. A radiated output power of 10 mW and a dc-to-RF efficiency of 20 
Keywords:
10 mW, 20 percent, 24 GHz, active antennas, active integrated microstrip antenna, flip-chip devices, flip-chip technology, high electron mobility transistor, high electron mobility transistors, microstrip antennas, three-terminal device 
Journal title:
IEEE Microwave and Guided Wave Letters 
Year:
1999 
Journal volume:
Month:
jan 
Journal issue:
Pages contribution:
34--36 
Print-ISSN:
1051-8207