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Autor(en):
Russer, Peter 
Titel:
Si and SiGe Millimeter-Wave Integrated Circuits 
Abstract:
Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeter-wave sensors. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon- and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as...    »
 
Stichworte:
active devices, antenna elements, EHF, elemental semiconductors, Ge-Si alloys, integrated circuit technology, millimeter-wave front-ends, millimeter-wave integrated circuits, MIMIC, monolithic ICs, nonlinear devices, passive planar structures, review, reviews, semiconductor materials, Si, Si MIMICs, SiGe, SiGe MIMICs, silicon, single-chip realizations 
Zeitschriftentitel:
IEEE Transactions on Microwave Theory and Techniques 
Jahr:
1998 
Band / Volume:
46 
Monat:
may 
Heft / Issue:
Seitenangaben Beitrag:
590--603 
Print-ISSN:
0018-9480