Benutzer: Gast  Login
Dokumenttyp:
Zeitschriftenaufsatz 
Autor(en):
Gagliardi, A.; Romano, G.; Pecchia, A.; Di Carlo, A. 
Titel:
Simulation of Inelastic Scattering in Molecular Junctions: Application to Inelastic Electron Tunneling Spectroscopy and Dissipation Effects 
Abstract:
In this paper we investigate inelastic processes inside molecular junctions, comprising two electrodes, metallic or semiconducting, connected by a molecular bridge. Inelastic events are fundamental not only because they define the concept of dissipation and resistance at the nanoscale, but also because inelastic scattering can be used directly as probes to investigate characteristics of molecular junctions, such as the geometry of the molecular moiety. We present a non-equilibrium Green's functi...    »
 
Stichworte:
ELECTRON–PHONON SCATTERING; IETS; MOLECULAR ELECTRONICS; NEGF; POWER DISSIPATION; PROPENSITY RULES; TRANSMISSION CHANNELS 
Zeitschriftentitel:
Journal of Computational and Theoretical Nanoscience, Volume 7, Number 12, December 2010, pp. 2512-2526(15) 
Jahr:
2010 
Jahr / Monat:
2010-10 
Quartal:
4. Quartal 
Monat:
Dec 
Seitenangaben Beitrag:
2512 - 2526 
Verlag / Institution:
American Scientific Publishers 
Vorkommen: