We demonstrate the fabrication of ultra-thin titanium oxide films by plasma-induced surface oxidation. Ellipsometry measurements indicate an oxide thickness of about 2 nm. Electrical characterization was performed on microscale and nanoscale metal-insulator-metal tunneling diodes. Electrical fields up to 22 MV/cm were applied without destroying the titanium oxide films. The current-voltage-characteristic of the diodes are found to be asymmetric with respect to zero bias when employing electrodes with different work functions. The permittivity of the ultra-thin titanium oxide was determined to be less than 6, which is the smallest permittivity that has been reported for titanium oxide.     «

We demonstrate the fabrication of ultra-thin titanium oxide films by plasma-induced surface oxidation. Ellipsometry measurements indicate an oxide thickness of about 2 nm. Electrical characterization was performed on microscale and nanoscale metal-insulator-metal tunneling diodes. Electrical fields up to 22 MV/cm were applied without destroying the titanium oxide films. The current-voltage-characteristic of the diodes are found to be asymmetric with respect to zero bias when employing electrodes...     »